Simulation of a monolithically integrated CMOS bioamplifier for EEG recordings
Sui XH (Sui Xiaohong); Liu JB (Liu Jinbin); Gu M (Gu Ming); Pei WH (Pei Weihua); Chen HD (Chen Hongda); Sui, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
2005
会议名称IEEE Conference on Electron Devices and Solid-State Circuits
会议录名称2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS丛书标题: IEEE Conference on Electron Devices and Solid-State Circuits
页码PROCEEDINGS: 643-646
会议日期DEC 19-21, 2005
会议地点Kowloon, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-0-7803-9339-4
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要A monolithically integrated CMOS bioamplifier is presented in this paper for EEG recording applications. The capacitive-coupled circuit input structure is utilized to eliminate the large and random DC offsets existing in the electrode-tissue interface. Diode-connected NMOS transistors with negative voltage between gate and source are candidates for large resistors necessary to the bioamplifier. A passive BEF (Band Eliminator Filter) can reduce 50 Hz noise disturbance strength by more than 60 dB. A novel analysis approach is given to help determine the noise power spectral density. Simulation results show that the two-stage CMOS bioamplifier in a closed-loop capacitive feedback configuration,provides an AC in-band gain of 39.6 dB, a DC gain of zero, and an input-referred noise of 87 nVrms integrated from 0.01 Hz to 100 Hz.
关键词Amplifier
学科领域光电子学
主办者IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; IEEE Hong Kong Sect.; KC Wong Educ Fdn.; Solomon Systech Ltd.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9864
专题中国科学院半导体研究所(2009年前)
通讯作者Sui, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Sui XH ,Liu JB ,Gu M ,et al. Simulation of a monolithically integrated CMOS bioamplifier for EEG recordings[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:PROCEEDINGS: 643-646.
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