Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
	Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang); Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2007
会议名称	6th European Conference on Silicon Carbide and Related Materials
会议录名称	Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM
页码	556-557: 179-182
会议日期	SEP, 2006
会议地点	Newcastle upon Tyne, ENGLAND
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.
关键词	Polycrystalline 3c-sic Resonator Doping Silicon-carbide
学科领域	光电子学
主办者	II VI Inc.; III Vs Review.; Cree Inc.; Compound Semicond.; Dow Corning Compound Semicond Solut.; LPE.; Norstel AB.; SemiSouth.; SiCED.; SiCrystal.; Surface Technol Syst plc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9854
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Sun, G ,Ning, J ,Liu, X ,et al. Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2007:556-557: 179-182.

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