Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors
	Li GK; Wang XD; Liang JR; Ji A; Hu M; Yang F; Liu J; Wu NJ; Chen HD; Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
	2008
会议名称	2nd IEEE International Nanoelectronics Conference
会议录名称	2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
页码	VOLS 1-3: 921-923
会议日期	MAR 24-27, 2008
会议地点	Shanghai, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1572-4
部门归属	[li, guike; liu, jian; wu, nanjian] chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.
学科领域	微电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7756
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Li GK,Wang XD,Liang JR,et al. Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 921-923.

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