Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
Jiang DS; Bian LF; Liang XG; Chang K; Sun BQ; Johnson S; Zhang YH; Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
2004
会议名称International Conference on Materials for Advanced Technologies
会议录名称JOURNAL OF CRYSTAL GROWTH, 268 (3-4)
页码336-341
会议日期DEC 07-12, 2003
会议地点Singapore, SINGAPORE
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0022-0248
部门归属cas, inst semicond, sklsm, beijing 100083, peoples r china; arizona state univ, csser, tempe, az 85287 usa; arizona state univ, dept elect engn, tempe, az 85287 usa
摘要The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.
关键词Molecular Beam Epitaxy Quantum Wells Gaassb/gaas Gaas Lasers Gain
学科领域半导体物理
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14827
专题中国科学院半导体研究所(2009年前)
通讯作者Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Jiang DS,Bian LF,Liang XG,et al. Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2004:336-341.
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