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Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells | |
Jiang DS; Bian LF; Liang XG; Chang K; Sun BQ; Johnson S; Zhang YH; Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn | |
2004 | |
会议名称 | International Conference on Materials for Advanced Technologies |
会议录名称 | JOURNAL OF CRYSTAL GROWTH, 268 (3-4) |
页码 | 336-341 |
会议日期 | DEC 07-12, 2003 |
会议地点 | Singapore, SINGAPORE |
出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
出版者 | ELSEVIER SCIENCE BV |
ISSN | 0022-0248 |
部门归属 | cas, inst semicond, sklsm, beijing 100083, peoples r china; arizona state univ, csser, tempe, az 85287 usa; arizona state univ, dept elect engn, tempe, az 85287 usa |
摘要 | The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved. |
关键词 | Molecular Beam Epitaxy Quantum Wells Gaassb/gaas Gaas Lasers Gain |
学科领域 | 半导体物理 |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/14827 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn |
推荐引用方式 GB/T 7714 | Jiang DS,Bian LF,Liang XG,et al. Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2004:336-341. |
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