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无权访问的条目 期刊论文
作者:  Li SS (Li Shu-Shen);  Xia HB (Xia Han-Bai);  Li, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sslee@red.semi.ac.cn
Adobe PDF(188Kb)  |  收藏  |  浏览/下载:835/315  |  提交时间:2010/03/29
无权访问的条目 期刊论文
作者:  Li SS (Li Shu-Shen);  Xia JB (Xia Jian-Bai);  Li, SS, CCAST, World Lab, POB 8730, Beijing 100080, Peoples R China. 电子邮箱地址: sslee@red.semi.ac.cn
Adobe PDF(410Kb)  |  收藏  |  浏览/下载:998/418  |  提交时间:2010/03/29
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Ran, JX;  Wang, XL;  Hu, GX;  Li, JP;  Wang, JX;  Wang, CM;  Zeng, YP;  Li, JM;  Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)  |  收藏  |  浏览/下载:1809/528  |  提交时间:2010/03/29
Aln  Impurities  Donor  
无权访问的条目 期刊论文
作者:  Zhang JP;  Sun DZ;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP,Chinese Acad Sci,Inst Semicond,Novel Mat Ctr,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载:997/271  |  提交时间:2010/08/12