中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共17条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD 会议论文
Group-IV Semiconductor Nanostructures丛书标题: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, Boston, MA, NOV 29-DEC 02, 2004
作者:  Wang, XX;  Zhang, JG;  Wang, QM;  Wang, XX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(394Kb)  |  收藏  |  浏览/下载：1438/189  |  提交时间：2010/03/29
Silicon Nanowires  
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1783/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1904/427  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes  
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang SB;  Liao XB;  Xu YY;  Hu ZH;  Zeng XB;  Diao HW;  Luo MC;  Kong G;  Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(93Kb)  |  收藏  |  浏览/下载：1828/428  |  提交时间：2010/10/29
Polymorphous Silicon  Light-scattering  Thin-films  Si  Microcrystallinity  Absorption  States  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1612/302  |  提交时间：2010/10/29
Spectrum  
Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zeng XB;  Liao XB;  Diao HW;  Hu ZH;  Xu YY;  Zhang SB;  Chen CY;  Chen WD;  Kong GL;  Zeng XB Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(683Kb)  |  收藏  |  浏览/下载：1628/333  |  提交时间：2010/10/29
Laser-ablation  Semiconductor Nanowires  Growth  Mechanism  Evaporation  Diameter  Wires  
Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Yue GZ;  Chen LF;  Wang Q;  Iwaniczko E;  Kong GL;  Baugh J;  Wu Y;  Han DX;  Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1201/0  |  提交时间：2010/10/29
Vibrational-spectra  
Light-excited structural instability of a-Si : H. 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Kong GL;  Zhang DL;  Yue GZ;  Wang YQ;  Liao XB;  Kong GL Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1106/0  |  提交时间：2010/10/29
Hydrogenated Amorphous-silicon  
Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Wang YQ;  Liao XB;  Diao HW;  He J;  Ma ZX;  Yue GZ;  Shen SR;  Kong GL;  Zhao YW;  Li ZM;  Yun F;  Wang YQ Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(958Kb)  |  收藏  |  浏览/下载：1343/287  |  提交时间：2010/10/29
Amorphous-silicon  Crystallization  Transistors  
High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Sheng SR;  Liao XB;  Ma ZX;  Yue GZ;  Wang YQ;  Kong GL;  Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(390Kb)  |  收藏  |  浏览/下载：1472/281  |  提交时间：2010/10/29
A-si-h  Light Soaking  Photoconductivity  Increase