中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共6条，第1-6条 帮助

已选(0)清除 条数/页：   排序方式：
Fabrication method of silicon nanostructures by anisotropic etching 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Han, WH;  Yang, X;  Wang, Y;  Yang, FH;  Yu, JZ;  Han, WH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1308Kb)  |  收藏  |  浏览/下载：1384/368  |  提交时间：2010/03/09
Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang Y;  Han WH;  Yang X;  Chen JJ;  Yang FH;  Wang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(2039Kb)  |  收藏  |  浏览/下载：1740/318  |  提交时间：2010/03/09
Devices  
无权访问的条目 期刊论文
作者:  Han WH;  Yu JZ;  Han WH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(63Kb)  |  收藏  |  浏览/下载：962/317  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Han WH;  Yu JZ;  Wang QM;  Han WH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(46Kb)  |  收藏  |  浏览/下载：867/247  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Han WH;  Yu JZ;  Wang QM;  Han WH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(39Kb)  |  收藏  |  浏览/下载：848/291  |  提交时间：2010/08/12
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1663/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas