Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
	Wang YL; Wu J; Chen YH; Wang ZG; Zeng YP; Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
	2004
会议名称	13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称	SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
页码	238-241
会议日期	SEP 20-25, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8668-X
部门归属	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.
关键词	Layer-ordering Orientation
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9926
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang YL,Wu J,Chen YH,et al. Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:238-241.

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