Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
	Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.); Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
	2007
会议名称	6th European Conference on Silicon Carbide and Related Materials
会议录名称	Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM
页码	556-557: 109-112
会议日期	SEP, 2006
会议地点	Newcastle upon Tyne, ENGLAND
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
摘要	Homoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.
关键词	Homoepitaxy 4h-sic Multi-epilayer Uv Detection p(+)-pi-n(-) Ultraviolet Photodetector Epitaxial-growth
学科领域	半导体材料
主办者	II VI Inc.; III Vs Review.; Cree Inc.; Compound Semicond.; Dow Corning Compound Semicond Solut.; LPE.; Norstel AB.; SemiSouth.; SiCED.; SiCrystal.; Surface Technol Syst plc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9852
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Liu, XF ,Sun, GS ,Zhao, YM ,et al. Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2007:556-557: 109-112.

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