SHicon-based resonant-cavity-enhanced photodetectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	SHicon-based resonant-cavity-enhanced photodetectors
	Cheng BW (Cheng Buwen); Li CB (Li Chuanbo); Mao RW (Mao Rongwei); Yao F (Yao Fei); Xue CL (Xue Chunlai); Zhang JG (Zhang Jianguo); Shi WH (Shi Wenhua); Zuo YH (Zuo Yuhua); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming); Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
	2006
会议名称	3rd International Conference on Group IV Photonics
会议录名称	2006 3rd IEEE International Conference on Group IV Photonics
页码	182-184
会议日期	SEP 13-15, 2006
会议地点	Ottawa, CANADA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-0095-9
部门归属	chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
摘要	Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology.
关键词	High-speed
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9782
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Cheng BW ,Li CB ,Mao RW ,et al. SHicon-based resonant-cavity-enhanced photodetectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:182-184.

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