Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

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	Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
	Lu J; Bi JF; Wang WZ; Gan HD; Meng HJ; Deng JJ; Zheng HZ; Zhao JH; Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
会议名称	International Magnetics Conference (Intermag)
会议录名称	IEEE TRANSACTIONS ON MAGNETICS
页码	44 (11): 2692-2695 Part 1 NOV
会议日期	MAY 04-08, 2008
会议地点	Madrid, SPAIN
出版地	445 HOES LANE, PISCATAWAY, NJ 08855 USA
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN	0018-9464
部门归属	[lu, j.; bi, j. f.; wang, w. z.; gan, h. d.; meng, h. j.; deng, j. j.; zheng, h. z.; zhao, j. h.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要	We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.
关键词	Magnetic Analysis
学科领域	半导体物理
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8362
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Lu J,Bi JF,Wang WZ,et al. Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As[C]. 445 HOES LANE, PISCATAWAY, NJ 08855 USA:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC:44 (11): 2692-2695 Part 1 NOV.

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