Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

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	Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers
	Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC; Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
会议名称	6th International Conference on Nanoscience and Technology
会议录名称	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
页码	9 (2): 1333-1336 Sp. Iss. SI FEB
会议日期	JUN 04-06, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA
出版者	AMER SCIENTIFIC PUBLISHERS
ISSN	1533-4880
部门归属	[wu, b. p.; wu, d. h.; xiong, y. h.; huang, s. s.; ni, h. q.; xu, y. q.; niu, z. c.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要	In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.
关键词	Inas Quantum Dots
学科领域	半导体化学
主办者	Natl Steering Comm Nanotechnol.; Natl Ctr Nanosci Technol.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Minist Educ China.; Chinese Acad Sci.; China Assoc Sci & Technol.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8332
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wu, BP,Wu, DH,Xiong, YH,et al. Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers[C]. 25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA:AMER SCIENTIFIC PUBLISHERS:9 (2): 1333-1336 Sp. Iss. SI FEB.

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