Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
	Zhou, W; Yang, JL; Li, Y; Yang, FH; Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
	2008
会议名称	3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems
会议录名称	2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS
页码	VOLS 1-3: 253-256
会议日期	JAN 06-09, 2008
会议地点	Sanya, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1907-4
部门归属	[zhou, wei; yang, jinling; li, yan; yang, fuhua] chinese acad sci, inst semicond, beijing 100864, peoples r china
摘要	Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.
关键词	Bulge Test Fracture Property Silicon Nitride Weibull Distribution Function
学科领域	微电子学
主办者	IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7770
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
推荐引用方式 GB/T 7714	Zhou, W,Yang, JL,Li, Y,et al. Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 253-256.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
658.pdf（267KB）			限制开放	--	请求全文