The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
	Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ; Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	1997
会议名称	10th International Conference on Superlattices, Microstructures and Microdevices
会议录名称	PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12
页码	219-225
会议日期	JUL 08-11, 1997
会议地点	LINCOLN, NEBRASKA
出版地	BOX 11, 105523 MOSCOW, RUSSIA
出版者	V S V CO. LTD
ISSN	0204-3467
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.
关键词	Growth Interdiffusion Islands Scale
学科领域	半导体物理
主办者	Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15093
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang ZM,Feng SL,Lu ZD,et al. The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix[C]. BOX 11, 105523 MOSCOW, RUSSIA:V S V CO. LTD,1997:219-225.

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