Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots
Wang ZM; Feng SL; Yang XP; Deng YM; Lu ZD; Xu ZY; Chen ZG; Zheng HZ; Han PD; Wang FL; Duan XF; Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
1997
会议名称10th International Conference on Superlattices, Microstructures and Microdevices
会议录名称PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12
页码213-218
会议日期JUL 08-11, 1997
会议地点LINCOLN, NEBRASKA
出版地BOX 11, 105523 MOSCOW, RUSSIA
出版者V S V CO. LTD
ISSN0204-3467
部门归属chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, electron microscopy lab, beijing 100083, peoples r china
摘要The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.
关键词Gaas Growth
学科领域半导体物理
主办者Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15091
专题中国科学院半导体研究所(2009年前)
通讯作者Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
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Wang ZM,Feng SL,Yang XP,et al. Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots[C]. BOX 11, 105523 MOSCOW, RUSSIA:V S V CO. LTD,1997:213-218.
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