Structural and photoelectric studies on double barrier quantum well infrared detectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Structural and photoelectric studies on double barrier quantum well infrared detectors
	Wu WG; Jiang DS; Cui LQ; Song CY; Zhuang Y; Wu WG Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1997
会议名称	1997 IEEE Hong Kong Electron Devices Meeting
会议录名称	1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS
页码	110-113
会议日期	35672
会议地点	HONG KONG, HONG KONG
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-3802-2
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.
学科领域	半导体物理
主办者	IEEE Electron Devices Soc.; City Univ Hong Kong, Dept Electr Engn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15061
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wu WG Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wu WG,Jiang DS,Cui LQ,et al. Structural and photoelectric studies on double barrier quantum well infrared detectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1997:110-113.

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