Self-organization of the InGaAs GaAs quantum dots superlattice

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Self-organization of the InGaAs GaAs quantum dots superlattice
	Zhuang QD; Li HX; Pan L; Li JM; Kong MY; Lin LY; Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr Beijing 100083 Peoples R China.
	1999
会议名称	10th International Conference on Molecular Beam Epitaxy (MBE-X)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 201
页码	1161-1163
会议日期	AUG 31-SEP 04, 1998
会议地点	CANNES, FRANCE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, novel mat ctr, beijing 100083, peoples r china
摘要	The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	X-ray-diffraction Islands Surfaces Growth
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15039
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhuang QD,Li HX,Pan L,et al. Self-organization of the InGaAs GaAs quantum dots superlattice[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1999:1161-1163.

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