Influence of precipitates on GaN epilayer quality

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influence of precipitates on GaN epilayer quality
	Kang JY; Huang QS; Wang ZG; Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
	2000
会议名称	IUMRS International Conference of Advanced Materials
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3)
页码	214-217
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	xiamen univ, dept phys, xiamen 361005, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.
关键词	Precipitate Gan Wds Tem Cathodoluminescence Vapor-phase Epitaxy Films Mechanism Growth
学科领域	半导体材料
主办者	IUMRS.; Amer Xtal Technol.; SUT Associates.; Univ Calif San Diego.; Shanghai Inst Met.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15001
专题	中国科学院半导体研究所（2009年前）
通讯作者	Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
推荐引用方式 GB/T 7714	Kang JY,Huang QS,Wang ZG,et al. Influence of precipitates on GaN epilayer quality[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:214-217.

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