Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
	Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY; Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2001
会议名称	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 227
页码	816-819
会议日期	SEP 11-15, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	X-ray Diffraction Molecular Beam Epitaxy Semiconducting Silicon Compounds Low-temperature Growth Films
学科领域	半导体材料
主办者	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14951
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li JM,Sun GS,Zhu SR,et al. Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:816-819.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2921.pdf（113KB）			限制开放	--	请求全文