Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

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	Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
	Kang JY; Shen YW; Wang ZG; Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
	2002
会议名称	9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX)
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91
页码	303-307
会议日期	SEP 24-28, 2001
会议地点	RIMINI, ITALY
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	xiamen univ, dept phys, xiamen 361005, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	Defects Gan Photoluminescence Electronic Structures Yellow Luminescence Epitaxial-films Mg
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14899
专题	中国科学院半导体研究所（2009年前）
通讯作者	Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
推荐引用方式 GB/T 7714	Kang JY,Shen YW,Wang ZG,et al. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2002:303-307.

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