Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

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	Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells
	Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM; Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2002
会议名称	Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称	INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码	4211-4214
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
出版地	JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN	0217-9792
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.
关键词	Si-ge Alloys Growth Layers
学科领域	光电子学
主办者	Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14865
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Cheng BW,Zhang JG,Zuo YH,et al. Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4211-4214.

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