Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels
Chen HD; Wu RG; Chen ZB; Zhang Y; Du Y; Zeng QM; Li XJ; Zhang YM; Zhou G; Hua F; Chen HD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
1999
会议名称Conference on Optoelectronic Integrated Circuits and Packaging III
会议录名称OPTOELETRONIC INTEGRATED CIRCUITS AND PACKAGING III, 3631
页码55-63
会议日期JAN 28-29, 1999
会议地点SAN JOSE, CA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-3101-X
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.
关键词Seed Arrays Smart Pixels Hybrid Integration Optical Interconnects Vlsi Switching Chip Mqw Modulators Silicon Cmos Circuits Arrays Operation Detectors Receivers Progress
学科领域光电子学
主办者SPIE.; Def Adv Res Projects Agnecy.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13811
专题中国科学院半导体研究所(2009年前)
通讯作者Chen HD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
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Chen HD,Wu RG,Chen ZB,et al. Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1999:55-63.
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