High temperature annealing behaviors of luminescent SIOx : H films

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	High temperature annealing behaviors of luminescent SIOx : H films
	Ma ZX; Xiang XB; Sheng SR; Liao XB; Shao CL; Umeno M; Ma ZX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1999
会议名称	Symposium E on Luminescent Materials at the 1999 MRS Spring Meeting
会议录名称	LUMINESCENT MATERIALS, 560
页码	101-106
会议日期	APR 05-08, 1999
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-467-X
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.
关键词	Raman-spectra Silicon Photoluminescence
学科领域	半导体材料
主办者	Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13781
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ma ZX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ma ZX,Xiang XB,Sheng SR,et al. High temperature annealing behaviors of luminescent SIOx : H films[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:101-106.