Defects in GaSb studied by coincidence Doppler broadening measurements

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	Defects in GaSb studied by coincidence Doppler broadening measurements
	Hu WG; Wang Z; Dai YQ; Wang SJ; Zhao YW; Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
	2004
会议名称	13th International Conference on Positron Annihilation (ICPA-13)
会议录名称	POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6
页码	114-116
会议日期	SEP 07-12, 2003
会议地点	Kyoto, JAPAN
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
ISBN	0-87849-936-9
部门归属	wuhan univ, dept phys, wuhan 430072, peoples r china; chinese acad sci, inst semicond, ctr mat sci, beijing, peoples r china
摘要	Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.
关键词	Coincidence Doppler Broadening Defects Gasb Positron Annihilation
学科领域	半导体材料
主办者	Commemorat Assoc Japan World Exposit (1970).; Res Fdn Mat Sci.; Sci Council Japan.; Phys Soc Japan.; Japan Soc Appl Phys.; Chem Soc Japan.; Japanese Soc Radiat Chem.; Japan Radioisotope Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13605
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
推荐引用方式 GB/T 7714	Hu WG,Wang Z,Dai YQ,et al. Defects in GaSb studied by coincidence Doppler broadening measurements[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2004:114-116.

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