Influence of the rapid thermal annealing on the properties of thin a-Si films

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influence of the rapid thermal annealing on the properties of thin a-Si films
	Nedev N; Beshkov G; Fortunato E; Georgiev SS; Ivanov T; Raniero L; Zhang SB; Martins R; Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
	2004
会议名称	2nd International Materials Symposium
会议录名称	ADVANCED MATERIALS FORUM II, 455-456
页码	108-111
会议日期	APR 14-16, 2003
会议地点	Caparica, PORTUGAL
出版地	BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
ISBN	0-87849-941-5
部门归属	bulgarian acad sci, inst solid state phys, bu-1784 sofia, bulgaria; new univ lisbon, fac sci & technol, dept mat sci, cenimat, p-2829516 caparica, portugal; new univ lisbon, fac sci & technol, cemop, p-2829516 caparica, portugal; chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china
摘要	The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.
学科领域	半导体材料
主办者	Portuguese Mat Soc.; Portuguese Sci Fdn.; Calouste Gulbenkian Fdn.; Luso Amer Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13597
专题	中国科学院半导体研究所（2009年前）
通讯作者	Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
推荐引用方式 GB/T 7714	Nedev N,Beshkov G,Fortunato E,et al. Influence of the rapid thermal annealing on the properties of thin a-Si films[C]. BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2004:108-111.

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