Structural optimizations of SOI-based single-mode rib waveguide bends

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	Structural optimizations of SOI-based single-mode rib waveguide bends
	Chen, YY; Yan, QF; Yang, D; Chen, SW; Yu, JZ; Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2004
会议名称	7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称	2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码	VOLS 1- 3 PROCEEDINGS: 2015-2017
会议日期	OCT 18-21, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8511-X
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Effects of structure parameters on bend loss of rib silicon-on-insulator (Sol) bend waveguides have been analyzed by means of effective index method (EIM) and 2D bend loss formula. The simulation results indicate that the bend loss decreases with the increase of bend radius and waveguide width, as well as with the decrease of the step factor of the rib waveguide. Moreover, the optional structure parameters have been found when bend waveguides are single-mode.
关键词	Silicon-on-insulator Bend Waveguide Bend Loss Integrated Optics Silicon-on-insulator
学科领域	光电子学
主办者	Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10100
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Chen, YY,Yan, QF,Yang, D,et al. Structural optimizations of SOI-based single-mode rib waveguide bends[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 2015-2017.

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