A silicon capacitive microphone based on oxidized porous silicon sacrificial technology

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A silicon capacitive microphone based on oxidized porous silicon sacrificial technology
	Ning, J; Liu, ZL; Liu, HZ; Ge, YC; Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
	2004
会议名称	7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称	2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码	VOLS 1- 3 PROCEEDINGS: 1872-1875
会议日期	OCT 18-21, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8511-X
部门归属	chinese acad sci, microelect r&d ctr, inst semicond, beijing 100083, peoples r china
摘要	In this paper, a new capacitive microphone fabrication technology is proposed. It describes using the oxidized porous silicon sacrificial technology to make air gap and using KOH etching technique to make the backplate containing acoustic holes based on the principle that the heavy p(+)-doping silicon can be nearly etched in KOH solution. The innovation of the method is using oxidized porous silicon technology. The sensitivity of the fabricated microphone is from -55dB ( 1.78mV/Pa) to -45dB (5.6mV/Pa) in the frequency range of 500Hz to 25kHz. Its cut-off frequency is higher than 20kHz.
关键词	Silicon Capacitive Microphone Oxidized Porous Silicon Sacrificial Layer
学科领域	微电子学
主办者	Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10096
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Ning, J,Liu, ZL,Liu, HZ,et al. A silicon capacitive microphone based on oxidized porous silicon sacrificial technology[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 1872-1875.

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